Supporting information Covalent Functionalization of GaP(110) Surfaces via a Staudinger-Type Reaction with Perfluorophenyl Azide
نویسندگان
چکیده
Department of Physics, University of California at Berkeley, Berkeley, California 94720, United States Joint Center for Artificial Photosynthesis, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States. CIC nanoGUNE, Donostia San Sebastián 20018, Spain Ikerbasque, Basque Foundation for Science, Bilbao 48011, Spain Departamento de Física Teórica de la Materia Condensada, Universidad Autónoma de Madrid, E-28049 Madrid, Spain Molecular Foundry, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States Department of Chemistry, University of California, Berkeley, California 94720, United States Material Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, United States Kavli Energy Nanosciences Institute at Berkeley, Berkeley, California 94720, United States Condensed Matter Physics Center (IFIMAC), Universidad Autónoma de Madrid, E-28049 Madrid, Spain
منابع مشابه
Covalent Functionalization of GaP(110) Surfaces via a Staudinger- Type Reaction with Perfluorophenyl Azide
Despite the markedly low chemical reactivity of the nonpolar (110) surfaces of III−V semiconductors, the covalent functionalization of GaP(110) surfaces with perfluorophenyl azide (PFPA) molecules by a Staudinger-type reaction occurs only slightly above room temperature (325 K). Scanning tunneling microscopy observations, combined with density functional theory calculations, support the formati...
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تاریخ انتشار 2016